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DTSTART:20221028T160000Z
DTEND:20221028T164500Z
SUMMARY:RF – GaN on Si and GaN on SiC Process Control Challenges
DESCRIPTION:Abstract 



Considering the increasing drive for RF semiconductor electronics to operate at higher and higher power densities, GaN-on-SiC and GaN-on-Si integrated circuits attract increasing interest. Such technologies will provide high-efficiency systems operating at lower operational temperatures, reduced energy consumption, smaller chip size and weight, and increased operational lifetime of the chipset. In this presentation, I will discuss the fabrication process requirements, and hence performance, taking into consideration application and operating frequencies. In addition, the presentation will highlight Cardiff University activities in supply chain projects and research capabilities in developing GaN technology..



Speakers’ Bio



Khaled Elgaid received the B.Sc. degree from the University of Evansville, Indiana, USA, an M.Sc. degree from the University of Cincinnati, Ohio, USA, and his Ph.D. degree from the University of Glasgow, U.K.  After completing his PhD, Prof. Elgaid spent 21 years at Glasgow University, firstly as a researcher and then as a Senior Lecturer leading a team developing MMIC technology. In 2018, he moved to Cardiff University, U.K., leading a research team developing high-speed integrated electronics technology in compound semiconductors, with a focus on GaN and future telecommunications, sensors, and radar applications operating at frequencies up to THz.



 
LOCATION:4124 Mackenzie, Carleton University, 1125 Colonel By Dr, Ottawa, ON K1S 5B6
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